Measurement Methodology for Accurate Modeling of SiC MOSFET Switching Behavior Over Wide Voltage and Current Ranges. eResource / Hiroyuki Sakairi, Tatsuya Yanagi, Hirotaka Otake, Naotaka Kuroda, Hiroaki Tanigawa, Ken Nakahara
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TextLanguage: English Publication details: 2018.Description: 12 pSubject(s):
| Item type | Current library | Call number | Copy number | Status | Date due | Barcode | |
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ელ.უცხოური სტატია / eForeign Article
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ცენტრალური ბიბლიოთეკა / Central library კომპიუტერული დარ. / Computer hall | 621 / CD-6267 (Browse shelf(Opens below)) | 6267 5 | Available | 2024-4183 |
IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 33, NO. 9
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